摘要/Abstract
摘要： β-Ga2O3作为新一代超宽带隙半导体材料,因优异的物理性能和在器件中的高性能而受到越来越多的关注。β-Ga2O3的制备可采用浮区法、导模(EFG)法等多种熔融晶体生长方法。缺陷通常会对半导体器件的性能产生严重的负面影响,所以β-Ga2O3晶体的缺陷检测技术显得尤为重要。过去通常采用刻蚀的方法进行位错的检测和密度计算,但这种方法是破坏性的,只适用于实验样品的研究分析。本文突破传统缺陷分析方法的局限,引入X射线形貌分析术(XRT)并结合酸性腐蚀法,对导模法生长β-Ga2O3的(001)、(010)、(100)面分别进行了深入研究,揭示了位错在三维空间的分布特征,明确指出,在导模法晶体中,沿着b轴[010]方向的位错占主导地位,为理解β-Ga2O3位错的结构和特征提供了宝贵的信息,进而为之后外延和器件晶面的选择指明了新的方向。
关键词:
氧化镓,
宽禁带半导体,
位错,
X射线形貌分析术,
导模法,
腐蚀法
Abstract: β-Ga2O3, as a new generation of ultra-wide bandgap semiconductor material, has garnered increasing attention due to its exceptional physical properties and high performance in devices. Various melt crystal growth techniques, such as the floating zone method and edge-defined film-fed growth (EFG) method, can be employed for the preparation of β-Ga2O3. Defects often exert significant adverse effects on the performance of semiconductor devices (e.g., higher leakage currents and lower breakdown voltages), making defect detection techniques for β-Ga2O3 crystals particularly crucial, especially for dislocation defects within linear defects. Traditionally, etching methods were used for the detection and density calculation of dislocations, but common methods for characterizing material defects are destructive and only applicable to the research analysis of experimental samples. In this paper, X-ray topography (XRT) and acid etching were utilized to investigate β-Ga2O3 grown by EFG method on (001), (010), and (100) surface, demonstrating the three-dimensional distribution characteristics of dislocations. It is shown that dislocations along the b-axis [010] direction dominate, providing valuable insights into the structure and characteristics of β-Ga2O3 dislocations. This, in turn, offers new directions for the subsequent selection of epitaxial and device crystal orientations.
Key words:
β-Ga2O3,
wide bandgap semiconductor,
dislocation,
XRT,
EFG method,
etching method
中图分类号:
O77
TN304.2+1
引用本文
杨文娟, 卜予哲, 赛青林, 齐红基. 导模法生长氧化镓晶体中的位错缺陷及其分布特点[J]. 人工晶体学报, 2025, 54(3): 414-419.
YANG Wenjuan, BU Yuzhe, SAI Qinglin, QI Hongji. Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method[J]. Journal of Synthetic Crystals, 2025, 54(3): 414-419.
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http://rgjtxb.jtxb.cn/CN/10.16553/j.cnki.issn1000-985x.2024.0304
http://rgjtxb.jtxb.cn/CN/Y2025/V54/I3/414
参考文献
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